3D-Silicon and Passive CMOS Sensors for Pixel Detectors in High Radiation Environments
3D-Silicon and Passive CMOS Sensors for Pixel Detectors in High Radiation Environments
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dc.contributor.advisor | Wermes, Norbert | |
dc.contributor.author | Pohl, David-Leon | |
dc.date.accessioned | 2020-10-30T16:18:52Z | |
dc.date.available | 2020-10-30T16:18:52Z | |
dc.date.issued | 30.10.2020 | |
dc.identifier.uri | https://hdl.handle.net/20.500.11811/8743 | |
dc.description.abstract | The future upgrade of the Large Hadron Collider to the High-Luminosity LHC demands new pixel detectors that can operate in environments with exceptionally high radiation. This requires investigations into new radiation-tolerant sensor technologies and readout electronics, and the advancement of radiation-damage models. In this work, planar- and 3D-silicon sensors from the latest upgrade of the ATLAS pixel detector~(IBL) and novel passive CMOS sensors are characterized after high levels of irradiation. New measurement techniques for the readout chip (ATLAS FE-I4) enabled precise charge-collection efficiency studies with highly segmented silicon sensors and the extraction of radiation-damage model parameters. A dedicated simulation, based on a model with just 2 parameters, successfully describes the dependence of charge collection on sensor voltage up to a fluence of 5e15 neq/cm² NIEL. The life-time of charge-carriers in silicon at 5e15 neq/cm² NIEL is determined to be (0.75 ± 0.08) ns. At 7e15 neq/cm², the charge-collection efficiency is about 50 % for 3D- and 250 um planar-silicon sensor designs. The 3D-silicon sensors demonstrate a much lower power consumption (~15 %), which is an important advantage for their potential usage in the innermost layer of the future pixel detector. For the outer pixel layer, which has relaxed requirements for radiation-tolerance (1e15 neq/cm²), a novel prototype of a planar silicon sensor is characterized. Since the sensor implantations are produced using a 150 nm CMOS process from LFoundry, they are termed 'passive CMOS' sensors. A detailed study with respect to crucial sensor parameters, such as bulk resistivity (> 2 kOhm-cm), capacitance (105 fF), and detection efficiency (99 %) reveals similar performance to current ATLAS planar-silicon sensors. Additionally, resistor biasing of pixels, a feature available in the CMOS process, enhances the detection efficiency by approximately 1 %. Driven by these promising results, the option to use passive CMOS sensors for the future ATLAS pixel detector is actively pursued. | en |
dc.language.iso | eng | |
dc.rights | In Copyright | |
dc.rights.uri | http://rightsstatements.org/vocab/InC/1.0/ | |
dc.subject | Pixeldetektoren | |
dc.subject | ATLAS | |
dc.subject | Siliziumsensoren | |
dc.subject | strahlentolerante Detektoren | |
dc.subject | Strahlenschädensimulation | |
dc.subject | pixel detectors | |
dc.subject | silicon sensors | |
dc.subject | radiation tolerant detectors | |
dc.subject | bulk damage modelling | |
dc.subject.ddc | 530 Physik | |
dc.title | 3D-Silicon and Passive CMOS Sensors for Pixel Detectors in High Radiation Environments | |
dc.type | Dissertation oder Habilitation | |
dc.publisher.name | Universitäts- und Landesbibliothek Bonn | |
dc.publisher.location | Bonn | |
dc.rights.accessRights | openAccess | |
dc.identifier.urn | https://nbn-resolving.org/urn:nbn:de:hbz:5-60007 | |
ulbbn.pubtype | Erstveröffentlichung | |
ulbbnediss.affiliation.name | Rheinische Friedrich-Wilhelms-Universität Bonn | |
ulbbnediss.affiliation.location | Bonn | |
ulbbnediss.thesis.level | Dissertation | |
ulbbnediss.dissID | 6000 | |
ulbbnediss.date.accepted | 08.01.2020 | |
ulbbnediss.institute | Mathematisch-Naturwissenschaftliche Fakultät : Fachgruppe Physik/Astronomie / Physikalisches Institut (PI) | |
ulbbnediss.fakultaet | Mathematisch-Naturwissenschaftliche Fakultät | |
dc.contributor.coReferee | Desch, Klaus |
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