Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition
Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition
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DissertationPrüfungsdatum
17.07.2012Datum der Veröffentlichung
23.07.2012Erstgutachter
Kroha, JohannZweitgutachter
Flume, RainaldMetadaten
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Inhalt
Since the Mott-Hubbard metal-insulator transition is a first order phase transition, we can always find a phase coexistence region in the phase diagram. In this region, the metallic state and the insulating state coexists, although one of these states is the meta-stable state (if the parameters are off the first order phase transition line). Micro domains can be thermally excited to the meta-stable state. Therefore, domains exist inside a bulk material. Between the domain and the bulk material, a domain wall is built up, which can be calculated by the spatially resolved DMFT. With the domain wall DOS results, we can calculate the domain size distribution function P(R). If we simulate a large lattice system where the domains are created according to the distribution function P(R), we find that the total resistivity grows linearly as T increases. This is another explanation to the linear resistivity behaviour in the normal-state superconductors.
Schlagwörter
Metal-Insulator Phase Transition, Linear Resistivity, NCA, DMFT, Spatially resolved DMFT
Klassifikation (DDC)
530 PhysikLiu, Qinyong: Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition. - Bonn, 2012. - Dissertation, Rheinische Friedrich-Wilhelms-Universität Bonn.
Online-Ausgabe in bonndoc: https://nbn-resolving.org/urn:nbn:de:hbz:5n-29298
Online-Ausgabe in bonndoc: https://nbn-resolving.org/urn:nbn:de:hbz:5n-29298
@phdthesis{handle:20.500.11811/5352,
urn: https://nbn-resolving.org/urn:nbn:de:hbz:5n-29298,
author = {{Qinyong Liu}},
title = {Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition},
school = {Rheinische Friedrich-Wilhelms-Universität Bonn},
year = 2012,
month = jul,
note = {Since the Mott-Hubbard metal-insulator transition is a first order phase transition, we can always find a phase coexistence region in the phase diagram. In this region, the metallic state and the insulating state coexists, although one of these states is the meta-stable state (if the parameters are off the first order phase transition line). Micro domains can be thermally excited to the meta-stable state. Therefore, domains exist inside a bulk material. Between the domain and the bulk material, a domain wall is built up, which can be calculated by the spatially resolved DMFT. With the domain wall DOS results, we can calculate the domain size distribution function P(R). If we simulate a large lattice system where the domains are created according to the distribution function P(R), we find that the total resistivity grows linearly as T increases. This is another explanation to the linear resistivity behaviour in the normal-state superconductors.},
url = {https://hdl.handle.net/20.500.11811/5352}
}
urn: https://nbn-resolving.org/urn:nbn:de:hbz:5n-29298,
author = {{Qinyong Liu}},
title = {Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition},
school = {Rheinische Friedrich-Wilhelms-Universität Bonn},
year = 2012,
month = jul,
note = {Since the Mott-Hubbard metal-insulator transition is a first order phase transition, we can always find a phase coexistence region in the phase diagram. In this region, the metallic state and the insulating state coexists, although one of these states is the meta-stable state (if the parameters are off the first order phase transition line). Micro domains can be thermally excited to the meta-stable state. Therefore, domains exist inside a bulk material. Between the domain and the bulk material, a domain wall is built up, which can be calculated by the spatially resolved DMFT. With the domain wall DOS results, we can calculate the domain size distribution function P(R). If we simulate a large lattice system where the domains are created according to the distribution function P(R), we find that the total resistivity grows linearly as T increases. This is another explanation to the linear resistivity behaviour in the normal-state superconductors.},
url = {https://hdl.handle.net/20.500.11811/5352}
}
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