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Emergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition

dc.contributor.advisorKroha, Johann
dc.contributor.authorLiu, Qinyong
dc.date.accessioned2020-04-18T00:07:48Z
dc.date.available2020-04-18T00:07:48Z
dc.date.issued23.07.2012
dc.identifier.urihttps://hdl.handle.net/20.500.11811/5352
dc.description.abstractSince the Mott-Hubbard metal-insulator transition is a first order phase transition, we can always find a phase coexistence region in the phase diagram. In this region, the metallic state and the insulating state coexists, although one of these states is the meta-stable state (if the parameters are off the first order phase transition line). Micro domains can be thermally excited to the meta-stable state. Therefore, domains exist inside a bulk material. Between the domain and the bulk material, a domain wall is built up, which can be calculated by the spatially resolved DMFT. With the domain wall DOS results, we can calculate the domain size distribution function P(R). If we simulate a large lattice system where the domains are created according to the distribution function P(R), we find that the total resistivity grows linearly as T increases. This is another explanation to the linear resistivity behaviour in the normal-state superconductors.en
dc.language.isoeng
dc.rightsIn Copyright
dc.rights.urihttp://rightsstatements.org/vocab/InC/1.0/
dc.subjectMetal-Insulator Phase Transition
dc.subjectLinear Resistivity
dc.subjectNCA
dc.subjectDMFT
dc.subjectSpatially resolved DMFT
dc.subject.ddc530 Physik
dc.titleEmergent Disorder: Nano-Domain Formation Near the First-Order Mott-Hubbard Transition
dc.typeDissertation oder Habilitation
dc.publisher.nameUniversitäts- und Landesbibliothek Bonn
dc.publisher.locationBonn
dc.rights.accessRightsopenAccess
dc.identifier.urnhttps://nbn-resolving.org/urn:nbn:de:hbz:5n-29298
ulbbn.pubtypeErstveröffentlichung
ulbbnediss.affiliation.nameRheinische Friedrich-Wilhelms-Universität Bonn
ulbbnediss.affiliation.locationBonn
ulbbnediss.thesis.levelDissertation
ulbbnediss.dissID2929
ulbbnediss.date.accepted17.07.2012
ulbbnediss.fakultaetMathematisch-Naturwissenschaftliche Fakultät
dc.contributor.coRefereeFlume, Rainald


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